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APTM100H80FT1G

APTM100H80FT1G

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Part No :

APTM100H80FT1G

Manufacturer
Microsemi
Description
MOSFET 4N-CH 1000V 11A SP1
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 20 - Jul 24 2025
DataSheet
APTM100H80FT1G PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of APTM100H80FT1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

APTM100H80FT1G Specifications
Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:4 N-Channel (H-Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):1000V (1kV)
Current - Continuous Drain (Id) @ 25°C:11A
Rds On (Max) @ Id, Vgs:960mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:3876pF @ 25V
Power - Max:208W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Chassis Mount
Package / Case:SP1
Supplier Device Package:SP1
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  • Delivery date: usually 2 to 7 working days.
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