IRF9Z34NSTRRPBF

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Part No :: IRF9Z34NSTRRPBF

Manufacturer: IR (Infineon Technologies)

Description: MOSFET P-CH 55V 19A D2PAK

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 20 - Jul 24 2025

DataSheet: IRF9Z34NSTRRPBF PDF

Availability: 0 pieces

Unit Price: ~~$1.17000~~

Current price of IRF9Z34NSTRRPBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IRF9Z34NSTRRPBF Specifications

Type	Description
Series:	HEXFET®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Not For New Designs
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	35 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	620 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.8W (Ta), 68W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D2PAK
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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