Micron Technology focuses on leading DRAM manufacturing and R&D, introduces advanced high-bandwidth memory (HBM) packaging technology to the United States, and will invest $200 billion in the United States.
Micron Technology announced the construction of a second leading memory manufacturing plant in Boise, Idaho, and the modernization and expansion of the existing manufacturing plant in Manassas, Virginia, to support the long-term growth demand brought by the AI market. These investments are designed to meet expected market demand, maintain market share, and support Micron's goal of producing 40% of DRAM production capacity in the United States.
Currently, Micron's first wafer fab in Idaho has achieved key construction milestones, and DRAM products are expected to begin mass production in 2027.
HBM race: Micron VS Samsung
Currently, Micron and Samsung are focusing on new HBM products. It is estimated that the total HBM market shipments will exceed 30 Billion Gb in 2026. The market share of HBM4 will increase quarter by quarter as suppliers continue to increase their sales. It is expected to officially surpass the HBM3e series products in the second half of 2026 and become the mainstream of the market.
Samsung Electronics, another giant in the memory industry, is also actively deploying in the HBM market. Samsung is adjusting its internal structure and accelerating the research and development of next-generation technologies and innovation in service models.