Magnachip has introduced its proprietary Super-Short Channel FET II (SSCFET® II) technology for the first time in its new 12-V Dual N-channel MOSFET (MDWC12D024PERH). SSCFET® II is Magnachip’s latest design technology that significantly reduces the channel length, thereby lowering the RSS(on).
Compared to the previous generation product of the same size, the RSS(on) of this product is reduced by approximately 22%. This reduction decreases power loss, shortens smartphone charging times, and lowers the internal temperature of smartphones by about 12% in fast charging mode.
With global smartphone manufacturers enhancing AI capabilities in smartphones, the importance of MOSFET products is growing. The new 12-V MXT LV MOSFET features high power efficiency and is optimized for a wide range of battery protection applications in premium smartphones, particularly on-device AI smartphones.
According to market research firm Omdia, shipments of on-device AI smartphones are expected to grow at an average annual rate of 50% from 2024 to 2028, reaching 606 million units in 2028.
“Following the development of Super-Short Channel FET I technology and the successful product rollout early last year, Magnachip has now introduced an upgraded Super-Short Channel FET II technology,” said YJ Kim, CEO of Magnachip. “We plan to continue developing innovative high-density cell trench technology and launch advanced power products targeting smartphones, smartwatches and earphones throughout the second half of this year.”