MJD112T4G

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Part No :: MJD112T4G

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: TRANS NPN DARL 100V 2A DPAK

Catalog: Transistors - Bipolar (BJT) - Single

Shipped from: HK warehouse

Expected Shipping Date: Aug 26 - Aug 30 2025

DataSheet: MJD112T4G PDF

Availability: 0 pieces

Unit Price: ~~$0.68000~~

Current price of MJD112T4G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

MJD112T4G Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	3V @ 40mA, 4A
Current - Collector Cutoff (Max):	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 2A, 3V
Power - Max:	20 W
Frequency - Transition:	25MHz
Operating Temperature:	-65°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:	DPAK

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