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SISHA14DN-T1-GE3

SISHA14DN-T1-GE3

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Part No :

SISHA14DN-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N-CH 30V 19.7A/20A PPAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 20 - May 24 2024
DataSheet
SISHA14DN-T1-GE3 PDF
Availability
5786 pieces
Unit Price
$0.67000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of SISHA14DN-T1-GE3 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

SISHA14DN-T1-GE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:19.7A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:1450 pF @ 15 V
FET Feature:-
Power Dissipation (Max):3.57W (Ta), 26.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8SH
Package / Case:PowerPAK® 1212-8SH
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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