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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | - |
Technology: | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | - |
Rds On (Max) @ Id, Vgs: | 60mOhm @ 20A |
Vgs(th) (Max) @ Id: | - |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | - |
Input Capacitance (Ciss) (Max) @ Vds: | 3091 pF @ 800 V |
FET Feature: | - |
Power Dissipation (Max): | 282W (Tc) |
Operating Temperature: | 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D2PAK (7-Lead) |
Package / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
TRANS SJT 1200V 45A D2PAK