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G2R120MT33J

G2R120MT33J

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Part No :

G2R120MT33J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 04 - May 08 2024
DataSheet
G2R120MT33J PDF
Availability
82 pieces
Unit Price
$95.63000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of G2R120MT33J is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

G2R120MT33J Specifications
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):3300 V
Current - Continuous Drain (Id) @ 25°C:35A
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:145 nC @ 20 V
Vgs (Max):+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:3706 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):-
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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