IAUC100N04S6L025ATMA1

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Part No :: IAUC100N04S6L025ATMA1

Manufacturer: IR (Infineon Technologies)

Description: IAUC100N04S6L025ATMA1

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 25 - Jul 29 2025

DataSheet: IAUC100N04S6L025ATMA1 PDF

Availability: 5000 pieces

Unit Price: ~~$1.07000~~

Current price of IAUC100N04S6L025ATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IAUC100N04S6L025ATMA1 Specifications

Type	Description
Series:	Automotive, AEC-Q101, OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	2.56mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 24µA
Gate Charge (Qg) (Max) @ Vgs:	34 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	2019 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	62W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8
Package / Case:	8-PowerTDFN

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