IPS65R1K4C6AKMA1

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Part No :: IPS65R1K4C6AKMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 650V 3.2A TO251-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 26 - Jul 30 2025

DataSheet: IPS65R1K4C6AKMA1 PDF

Availability: 1576 pieces

Unit Price: ~~$0.98000~~

Current price of IPS65R1K4C6AKMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IPS65R1K4C6AKMA1 Specifications

Type	Description
Series:	CoolMOS™
Package:	Tube
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	10.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	225 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	28W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO251-3
Package / Case:	TO-251-3 Stub Leads, IPak

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