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Type | Description |
---|---|
Series: | C3M™ |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 1200 V |
Current - Continuous Drain (Id) @ 25°C: | 66A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 53.5mOhm @ 33.3A, 15V |
Vgs(th) (Max) @ Id: | 3.6V @ 9.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 101 nC @ 15 V |
Vgs (Max): | +15V, -4V |
Input Capacitance (Ciss) (Max) @ Vds: | 2900 pF @ 1000 V |
FET Feature: | - |
Power Dissipation (Max): | 326W (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
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