G2R1000MT17D

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Part No :: G2R1000MT17D

Manufacturer: GeneSiC Semiconductor

Description: SIC MOSFET N-CH 4A TO247-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: May 18 - May 22 2024

DataSheet: G2R1000MT17D PDF

Availability: 0 pieces

Unit Price: ~~$4.86000~~

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of G2R1000MT17D is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

G2R1000MT17D Specifications

Type	Description
Series:	G2R™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1700 V
Current - Continuous Drain (Id) @ 25°C:	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:	4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:	139 pF @ 1000 V
FET Feature:	-
Power Dissipation (Max):	53W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3

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