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TP65H070LDG

TP65H070LDG

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Part No :

TP65H070LDG

Manufacturer
Transphorm
Description
GANFET N-CH 650V 25A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 17 - May 21 2024
DataSheet
TP65H070LDG PDF
Availability
673 pieces
Unit Price
$12.98000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of TP65H070LDG is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

TP65H070LDG Specifications
Type Description
Series:TP65H070L
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:25A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:85mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:4.8V @ 700µA
Gate Charge (Qg) (Max) @ Vgs:9.3 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 400 V
FET Feature:-
Power Dissipation (Max):96W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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