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G3R350MT12D

G3R350MT12D

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Part No :

G3R350MT12D

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 11A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
DataSheet
G3R350MT12D PDF
Availability
1167 pieces
Unit Price
$4.86000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of G3R350MT12D is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

G3R350MT12D Specifications
Type Description
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:420mOhm @ 4A, 15V
Vgs(th) (Max) @ Id:2.69V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:334 pF @ 800 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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  • Delivery date: usually 2 to 7 working days.
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