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RMD1N25ES9

RMD1N25ES9

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Part No :

RMD1N25ES9

Manufacturer
Rectron USA
Description
MOSFET N-CHANNEL 25V 1.1A SOT363
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 03 - Aug 07 2025
DataSheet
RMD1N25ES9 PDF
Availability
0 pieces
Unit Price
$0.06000

Current price of RMD1N25ES9 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RMD1N25ES9 Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:600mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:30 pF @ 10 V
FET Feature:-
Power Dissipation (Max):800mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-363
Package / Case:6-TSSOP, SC-88, SOT-363
  • Please confirm the specifications of the products when ordering.
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  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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