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XPW6R30ANB,L1XHQ

XPW6R30ANB,L1XHQ

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Part No :

XPW6R30ANB,L1XHQ

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
MOSFET N-CH 100V 45A 8DSOP
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 02 - Aug 06 2025
DataSheet
XPW6R30ANB,L1XHQ PDF
Availability
9978 pieces
Unit Price
$2.08000

Current price of XPW6R30ANB,L1XHQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

XPW6R30ANB,L1XHQ Specifications
Type Description
Series:U-MOSVIII-H
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:45A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:6.3mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:52 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3240 pF @ 10 V
FET Feature:-
Power Dissipation (Max):960mW (Ta), 132W (Tc)
Operating Temperature:175°C
Mounting Type:Surface Mount
Supplier Device Package:8-DSOP Advance
Package / Case:8-PowerVDFN
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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