TPH2R408QM,L1Q

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Part No :: TPH2R408QM,L1Q

Manufacturer: Toshiba Electronic Devices and Storage Corporation

Description: MOSFET N-CH 80V 120A 8SOP

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 28 - Aug 01 2025

DataSheet: TPH2R408QM,L1Q PDF

Availability: 0 pieces

Unit Price: ~~$1.91000~~

Current price of TPH2R408QM,L1Q is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

TPH2R408QM,L1Q Specifications

Type	Description
Series:	U-MOSX-H
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	2.43mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	87 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	8300 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	3W (Ta), 210W (Tc)
Operating Temperature:	175°C
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP Advance (5x5)
Package / Case:	8-PowerVDFN

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