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G2R1000MT33J

G2R1000MT33J

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Part No :

G2R1000MT33J

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 4A TO263-7
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
DataSheet
G2R1000MT33J PDF
Availability
1130 pieces
Unit Price
$16.58000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of G2R1000MT33J is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

G2R1000MT33J Specifications
Type Description
Series:G2R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):3300 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):20V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id:3.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs:21 nC @ 20 V
Vgs (Max):+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds:238 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-263-7
Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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