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TP65H300G4LSG

TP65H300G4LSG

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Part No :

TP65H300G4LSG

Manufacturer
Transphorm
Description
GANFET N-CH 650V 6.5A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 17 - May 21 2024
DataSheet
TP65H300G4LSG PDF
Availability
240 pieces
Unit Price
$4.02000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of TP65H300G4LSG is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

TP65H300G4LSG Specifications
Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V
Rds On (Max) @ Id, Vgs:312mOhm @ 5A, 8V
Vgs(th) (Max) @ Id:2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:9.6 nC @ 8 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 400 V
FET Feature:-
Power Dissipation (Max):21W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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