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Type | Description |
---|---|
Series: | E-Series, Automotive |
Package: | Tube |
Part Status: | Not For New Designs |
FET Type: | N-Channel |
Technology: | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss): | 900 V |
Current - Continuous Drain (Id) @ 25°C: | 23A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 15V |
Rds On (Max) @ Id, Vgs: | 155mOhm @ 15A, 15V |
Vgs(th) (Max) @ Id: | 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs: | 17.3 nC @ 15 V |
Vgs (Max): | +18V, -8V |
Input Capacitance (Ciss) (Max) @ Vds: | 350 pF @ 600 V |
FET Feature: | - |
Power Dissipation (Max): | 97W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
TVS DIODE 12V 19.9V SMC
SICFET N-CH 900V 23A TO247-3
SOUND LEVEL METER W/DATA LOGGING
IC CURRENT MONITOR(12BIT) 10DFN