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Type | Description |
---|---|
Series: | eGaN® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 23A |
Rds On (Max) @ Id, Vgs: | 6.3mOhm @ 20A, 5V |
Vgs(th) (Max) @ Id: | 2.5V @ 5.5mA |
Gate Charge (Qg) (Max) @ Vgs: | 7nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds: | 800pF @ 50V |
Power - Max: | - |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | Die |
Supplier Device Package: | Die |
EMITTER IR 855NM 80MA COAXIAL
FAN AXIAL 120X38MM 230VAC WIRE
GAN TRANS SYMMETRICAL HALF BRIDG
WIDE BAND LOW POWER AMPLIFIER, 1