TPD3215M

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Part No :

TPD3215M

Manufacturer
Transphorm
Description
GANFET 2N-CH 600V 70A MODULE
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
May 18 - May 22 2024
DataSheet
TPD3215M PDF
Availability
22 pieces
Unit Price
$175.13000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of TPD3215M is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

Type Description
Series:-
Package:Bulk
Part Status:Obsolete
FET Type:2 N-Channel (Half Bridge)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):600V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Rds On (Max) @ Id, Vgs:34mOhm @ 30A, 8V
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:28nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:2260pF @ 100V
Power - Max:470W
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:Module
Supplier Device Package:Module
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