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TPH3206LSGB

TPH3206LSGB

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Part No :

TPH3206LSGB

Manufacturer
Transphorm
Description
GANFET N-CH 650V 16A 3PQFN
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
May 16 - May 20 2024
DataSheet
TPH3206LSGB PDF
Availability
0 pieces
Unit Price
$0.00000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of TPH3206LSGB is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

TPH3206LSGB Specifications
Type Description
Series:-
Package:Tray
Part Status:Obsolete
FET Type:N-Channel
Technology:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V
Rds On (Max) @ Id, Vgs:180mOhm @ 10A, 8V
Vgs(th) (Max) @ Id:2.6V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:6.2 nC @ 4.5 V
Vgs (Max):±18V
Input Capacitance (Ciss) (Max) @ Vds:720 pF @ 480 V
FET Feature:-
Power Dissipation (Max):81W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:3-PQFN (8x8)
Package / Case:3-PowerDFN
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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