G3R160MT17D

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Part No :

G3R160MT17D

Manufacturer
GeneSiC Semiconductor
Description
SIC MOSFET N-CH 21A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
G3R160MT17D PDF
Availability
580 pieces
Unit Price
$11.43000

Current price of G3R160MT17D is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:G3R™
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1700 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):15V
Rds On (Max) @ Id, Vgs:208mOhm @ 12A, 15V
Vgs(th) (Max) @ Id:2.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 15 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1272 pF @ 1000 V
FET Feature:-
Power Dissipation (Max):175W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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