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RN1710JE(TE85L,F)

RN1710JE(TE85L,F)

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Part No :

RN1710JE(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
NPN X 2 BRT, Q1BSR=4.7KΩ, Q1BER=
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Jun 30 - Jul 04 2025
DataSheet
RN1710JE(TE85L,F) PDF
Availability
3968 pieces
Unit Price
$0.41000

Current price of RN1710JE(TE85L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RN1710JE(TE85L,F) Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-553
Supplier Device Package:ESV
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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