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RN1968(TE85L,F)

RN1968(TE85L,F)

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Part No :

RN1968(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS 2NPN PREBIAS 0.2W US6
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
RN1968(TE85L,F) PDF
Availability
3000 pieces
Unit Price
$0.48000

Current price of RN1968(TE85L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RN1968(TE85L,F) Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:200mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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