RN1701JE(TE85L,F)

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Part No :

RN1701JE(TE85L,F)

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS 2NPN PREBIAS 0.1W ESV
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Jul 08 - Jul 12 2025
DataSheet
RN1701JE(TE85L,F) PDF
Availability
1000 pieces
Unit Price
$0.48000

Current price of RN1701JE(TE85L,F) is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):4.7kOhms
Resistor - Emitter Base (R2):4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:250MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-553
Supplier Device Package:ESV
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  • Delivery date: usually 2 to 7 working days.
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