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NSVBC114EDXV6T1G

NSVBC114EDXV6T1G

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Part No :

NSVBC114EDXV6T1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS 2NPN BIAS BIPOLAR SOT563
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Jul 16 - Jul 20 2025
DataSheet
NSVBC114EDXV6T1G PDF
Availability
0 pieces
Unit Price
$0.11544

Current price of NSVBC114EDXV6T1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NSVBC114EDXV6T1G Specifications
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):10kOhms
Resistor - Emitter Base (R2):10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:500mW
Mounting Type:Surface Mount
Package / Case:SOT-563, SOT-666
Supplier Device Package:SOT-563
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