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NSVMUN5212DW1T1G

NSVMUN5212DW1T1G

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Part No :

NSVMUN5212DW1T1G

Manufacturer
Sanyo Semiconductor/ON Semiconductor
Description
TRANS 2NPN PREBIAS 0.25W SOT363
Catalog
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Jun 30 - Jul 04 2025
DataSheet
NSVMUN5212DW1T1G PDF
Availability
26698 pieces
Unit Price
$0.41000

Current price of NSVMUN5212DW1T1G is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

NSVMUN5212DW1T1G Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:-
Power - Max:250mW
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:SC-88/SC70-6/SOT-363
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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