HN3C10FUTE85LF

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Part No :

HN3C10FUTE85LF

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS 2 NPN 12V 7GHZ US6
Catalog
Transistors - Bipolar (BJT) - RF
Shipped from
HK warehouse
Expected Shipping Date
May 15 - May 19 2024
DataSheet
HN3C10FUTE85LF PDF
Availability
111 pieces
Unit Price
$0.54000

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of HN3C10FUTE85LF is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max):12V
Frequency - Transition:7GHz
Noise Figure (dB Typ @ f):1.1dB @ 1GHz
Gain:11.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 20mA, 10V
Current - Collector (Ic) (Max):80mA
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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