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RN2105MFV,L3F(CT

RN2105MFV,L3F(CT

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Part No :

RN2105MFV,L3F(CT

Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
TRANS PREBIAS PNP 50V 0.1A VESM
Catalog
Transistors - Bipolar (BJT) - Single, Pre-Biased
Shipped from
HK warehouse
Expected Shipping Date
Jul 13 - Jul 17 2025
DataSheet
RN2105MFV,L3F(CT PDF
Availability
7600 pieces
Unit Price
$0.18000

Current price of RN2105MFV,L3F(CT is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

RN2105MFV,L3F(CT Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250 MHz
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM
  • Please confirm the specifications of the products when ordering.
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  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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