FF6MR12W2M1B11BOMA1

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Part No :: FF6MR12W2M1B11BOMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET MODULE 1200V 200A

Catalog: Transistors - FETs, MOSFETs - Arrays

Shipped from: HK warehouse

Expected Shipping Date: Jun 30 - Jul 04 2025

DataSheet: FF6MR12W2M1B11BOMA1 PDF

Availability: 60 pieces

Unit Price: ~~$323.73000~~

Current price of FF6MR12W2M1B11BOMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FF6MR12W2M1B11BOMA1 Specifications

Type	Description
Series:	CoolSiC™+
Package:	Tray
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V
Current - Continuous Drain (Id) @ 25°C:	200A (Tj)
Rds On (Max) @ Id, Vgs:	5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id:	5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs:	496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds:	14700pF @ 800V
Power - Max:	20mW (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	AG-EASY2BM-2

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