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SIZF906DT-T1-GE3

SIZF906DT-T1-GE3

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Part No :

SIZF906DT-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2 N-CH 30V 60A POWERPAIR
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 01 - Jul 05 2025
DataSheet
SIZF906DT-T1-GE3 PDF
Availability
658 pieces
Unit Price
$1.75000

Current price of SIZF906DT-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIZF906DT-T1-GE3 Specifications
Type Description
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Half Bridge)
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Rds On (Max) @ Id, Vgs:3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22nC @ 4.5V, 92nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:2000pF @ 15V, 8200pF @ 15V
Power - Max:38W (Tc), 83W (Tc)
Operating Temperature:-55°C ~ 150°C (TA)
Mounting Type:Surface Mount
Package / Case:8-PowerWDFN
Supplier Device Package:8-PowerPair® (6x5)
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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