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SI5517DU-T1-GE3

SI5517DU-T1-GE3

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Part No :

SI5517DU-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET N/P-CH 20V 6A CHIPFET
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 06 - Jul 10 2025
DataSheet
SI5517DU-T1-GE3 PDF
Availability
123 pieces
Unit Price
$1.23000

Current price of SI5517DU-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI5517DU-T1-GE3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:6A
Rds On (Max) @ Id, Vgs:39mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds:520pF @ 10V
Power - Max:8.3W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:PowerPAK® ChipFET™ Dual
Supplier Device Package:PowerPAK® ChipFet Dual
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
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