BSM300D12P2E001

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Part No :: BSM300D12P2E001

Manufacturer: ROHM Semiconductor

Description: MOSFET 2N-CH 1200V 300A

Catalog: Transistors - FETs, MOSFETs - Arrays

Shipped from: HK warehouse

Expected Shipping Date: Jul 02 - Jul 06 2025

DataSheet: BSM300D12P2E001 PDF

Availability: 7 pieces

Unit Price: ~~$710.45000~~

Current price of BSM300D12P2E001 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSM300D12P2E001 Specifications

Type	Description
Series:	-
Package:	Tray
Part Status:	Active
FET Type:	2 N-Channel (Half Bridge)
FET Feature:	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C:	300A (Tc)
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	4V @ 68mA
Gate Charge (Qg) (Max) @ Vgs:	-
Input Capacitance (Ciss) (Max) @ Vds:	35000pF @ 10V
Power - Max:	1875W
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Chassis Mount
Package / Case:	Module
Supplier Device Package:	Module

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