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Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
FET Type: | 4 N-Channel |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 55A (Tc) |
Rds On (Max) @ Id, Vgs: | 50mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id: | 2.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 137nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1990pF @ 1000V |
Power - Max: | 245W (Tc) |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | SP3F |
COG GRAPH 240160 FSTN+ TRANSF
PM-MOSFET-SIC-SBD~-SP3F
IC CAPSENSE EXP 10 I/O 32-QFN
IC GEN/CHKER 12-BIT 28PLCC