EPC2107

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Part No :

EPC2107

Manufacturer
EPC
Description
GANFET 3 N-CH 100V 9BGA
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 04 - Jul 08 2025
DataSheet
EPC2107 PDF
Availability
1407 pieces
Unit Price
$2.01000

Current price of EPC2107 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

Type Description
Series:eGaN®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:3 N-Channel (Half Bridge + Synchronous Bootstrap)
FET Feature:GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:1.7A, 500mA
Rds On (Max) @ Id, Vgs:320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V
Vgs(th) (Max) @ Id:2.5V @ 100µA, 2.5V @ 20µA
Gate Charge (Qg) (Max) @ Vgs:0.16nC @ 5V, 0.044nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:16pF @ 50V, 7pF @ 50V
Power - Max:-
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:9-VFBGA
Supplier Device Package:9-BGA (1.35x1.35)
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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