BSZ0910NDXTMA1

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Part No :: BSZ0910NDXTMA1

Manufacturer: IR (Infineon Technologies)

Description: DIFFERENTIATED MOSFETS

Catalog: Transistors - FETs, MOSFETs - Arrays

Shipped from: HK warehouse

Expected Shipping Date: Jul 05 - Jul 09 2025

DataSheet: BSZ0910NDXTMA1 PDF

Availability: 3420 pieces

Unit Price: ~~$1.35000~~

Current price of BSZ0910NDXTMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSZ0910NDXTMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	9.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs:	9.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 15V
Power - Max:	1.9W (Ta), 31W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	PG-WISON-8

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