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SI3900DV-T1-GE3

SI3900DV-T1-GE3

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Part No :

SI3900DV-T1-GE3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 2A 6-TSOP
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 03 - Jul 07 2025
DataSheet
SI3900DV-T1-GE3 PDF
Availability
4769 pieces
Unit Price
$1.02000

Current price of SI3900DV-T1-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI3900DV-T1-GE3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2A
Rds On (Max) @ Id, Vgs:125mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:830mW
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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