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SI4966DY-T1-E3

SI4966DY-T1-E3

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Part No :

SI4966DY-T1-E3

Manufacturer
Vishay / Siliconix
Description
MOSFET 2N-CH 20V 8SOIC
Catalog
Transistors - FETs, MOSFETs - Arrays
Shipped from
HK warehouse
Expected Shipping Date
Jul 23 - Jul 27 2025
DataSheet
SI4966DY-T1-E3 PDF
Availability
0 pieces
Unit Price
$0.00000

Current price of SI4966DY-T1-E3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SI4966DY-T1-E3 Specifications
Type Description
Series:TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Obsolete
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:25mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:-
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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