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Type | Description |
---|---|
Series: | Automotive, AEC-Q101 |
Package: | Box |
Part Status: | Active |
FET Type: | 2 N-Channel (Half Bridge) |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 640A (Tc) |
Rds On (Max) @ Id, Vgs: | 2.97mOhm @ 480A, 15V |
Vgs(th) (Max) @ Id: | 3.6V @ 160mA |
Gate Charge (Qg) (Max) @ Vgs: | 15V |
Input Capacitance (Ciss) (Max) @ Vds: | 800V |
Power - Max: | - |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | Module |
Supplier Device Package: | Module |
1.2 KV, 480A HIGH PERFORMANCE SI
CONN HDR 60POS SMD GOLD