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Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual), Schottky |
FET Feature: | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C: | 370A (Tc) |
Rds On (Max) @ Id, Vgs: | 10mOhm @ 200A, 20V |
Vgs(th) (Max) @ Id: | 3V @ 10mA |
Gate Charge (Qg) (Max) @ Vgs: | 1360nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds: | - |
Power - Max: | 2300W |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | SP6 |
Supplier Device Package: | SP6 |
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