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A2G35S200-01SR3

A2G35S200-01SR3

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Part No :

A2G35S200-01SR3

Manufacturer
NXP Semiconductors
Description
AIRFAST RF POWER GAN TRANSISTOR
Catalog
Transistors - FETs, MOSFETs - RF
Shipped from
HK warehouse
Expected Shipping Date
Jul 14 - Jul 18 2025
DataSheet
A2G35S200-01SR3 PDF
Availability
182 pieces
Unit Price
$264.51000

Current price of A2G35S200-01SR3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

A2G35S200-01SR3 Specifications
Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:GaN HEMT
Frequency:3.4GHz ~ 3.6GHz
Gain:16.1dB
Voltage - Test:48 V
Current Rating (Amps):-
Noise Figure:-
Current - Test:291 mA
Power - Output:180W
Voltage - Rated:125 V
Package / Case:NI-400S-2S
Supplier Device Package:NI-400S-2S
  • Please confirm the specifications of the products when ordering.
  • MOQ means the minimum order quantity required to purchase each parts.
  • If you have special order instructions,please note it on the ordering pages.
  • The Pre-Shipment Inspection (PSI) will be applied.
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  • Orders cannot be canceled after shipping the packages.
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  • Please confirm with the logistics company in advance if you are in a remote area. (It may cost extra fees (35-50 USD) for delivery at those areas.)
  • The shopping cart will automatically calculate the shipping cost.
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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