IPI072N10N3GXKSA1

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Part No :: IPI072N10N3GXKSA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 100V 80A TO262-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: May 20 - May 24 2024

DataSheet: IPI072N10N3GXKSA1 PDF

Availability: 0 pieces

Unit Price: ~~$1.56996~~

Due to the large price fluctuation in 2021-2022, please send an inquiry to get the latest quotation, The current price of IPI072N10N3GXKSA1 is for reference only, if you want to get the best price, please submit an inquiry or email directly to our sales team [email protected]

IPI072N10N3GXKSA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tube
Part Status:	Not For New Designs
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	7.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:	68 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4910 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	150W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

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