SIHP21N65EF-GE3

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Part No :: SIHP21N65EF-GE3

Manufacturer: Vishay / Siliconix

Description: MOSFET N-CH 650V 21A TO220AB

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 08 - Jul 12 2025

DataSheet: SIHP21N65EF-GE3 PDF

Availability: 115 pieces

Unit Price: ~~$4.88000~~

Current price of SIHP21N65EF-GE3 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

SIHP21N65EF-GE3 Specifications

Type	Description
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	106 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2322 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	208W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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