FDP18N20F

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Part No :: FDP18N20F

Manufacturer: Sanyo Semiconductor/ON Semiconductor

Description: MOSFET N-CH 200V 18A TO220-3

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 07 - Jul 11 2025

DataSheet: FDP18N20F PDF

Availability: 14142000 pieces

Unit Price: ~~$1.43000~~

Current price of FDP18N20F is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

FDP18N20F Specifications

Type	Description
Series:	UniFET™
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	145mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	26 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1180 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	100W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3

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