BSZ180P03NS3EGATMA1

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Part No :: BSZ180P03NS3EGATMA1

Manufacturer: IR (Infineon Technologies)

Description: MOSFET P-CH 30V 9A/39.5A TSDSON

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 09 - Jul 13 2025

DataSheet: BSZ180P03NS3EGATMA1 PDF

Availability: 4995 pieces

Unit Price: ~~$0.71000~~

Current price of BSZ180P03NS3EGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSZ180P03NS3EGATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs:	30 nC @ 10 V
Vgs (Max):	±25V
Input Capacitance (Ciss) (Max) @ Vds:	2220 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	2.1W (Ta), 40W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TSDSON-8
Package / Case:	8-PowerTDFN

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