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BSZ180P03NS3EGATMA1

BSZ180P03NS3EGATMA1

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Part No :

BSZ180P03NS3EGATMA1

Manufacturer
IR (Infineon Technologies)
Description
MOSFET P-CH 30V 9A/39.5A TSDSON
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 09 - Jul 13 2025
DataSheet
BSZ180P03NS3EGATMA1 PDF
Availability
4995 pieces
Unit Price
$0.71000

Current price of BSZ180P03NS3EGATMA1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

BSZ180P03NS3EGATMA1 Specifications
Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 39.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2220 pF @ 15 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-8
Package / Case:8-PowerTDFN
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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