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STB4NK60Z-1

STB4NK60Z-1

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Part No :

STB4NK60Z-1

Manufacturer
STMicroelectronics
Description
MOSFET N-CH 600V 4A I2PAK
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Jul 02 - Jul 06 2025
DataSheet
STB4NK60Z-1 PDF
Availability
0 pieces
Unit Price
$0.91000

Current price of STB4NK60Z-1 is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

STB4NK60Z-1 Specifications
Type Description
Series:SuperMESH™
Package:Tube
Part Status:Not For New Designs
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:510 pF @ 25 V
FET Feature:-
Power Dissipation (Max):70W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:I2PAK
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Please confirm the specifications of the products when ordering.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
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