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GAN063-650WSAQ

GAN063-650WSAQ

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Part No :

GAN063-650WSAQ

Manufacturer
Nexperia
Description
GANFET N-CH 650V 34.5A TO247-3
Catalog
Transistors - FETs, MOSFETs - Single
Shipped from
HK warehouse
Expected Shipping Date
Aug 04 - Aug 08 2025
DataSheet
GAN063-650WSAQ PDF
Availability
166 pieces
Unit Price
$12.37000

Current price of GAN063-650WSAQ is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

GAN063-650WSAQ Specifications
Type Description
Series:Automotive, AEC-Q101
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:GaNFET (Cascode Gallium Nitride FET)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:34.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:60mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
FET Feature:-
Power Dissipation (Max):143W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
  • Please confirm the specifications of the products when ordering.
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  • If you have special order instructions,please note it on the ordering pages.
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  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped. (It may take up to 24 hours before carriers display the info.)
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