IRF3703PBF

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Part No :: IRF3703PBF

Manufacturer: IR (Infineon Technologies)

Description: MOSFET N-CH 30V 210A TO220AB

Catalog: Transistors - FETs, MOSFETs - Single

Shipped from: HK warehouse

Expected Shipping Date: Jul 15 - Jul 19 2025

DataSheet: IRF3703PBF PDF

Availability: 602 pieces

Unit Price: ~~$3.15000~~

Current price of IRF3703PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]

IRF3703PBF Specifications

Type	Description
Series:	HEXFET®
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	210A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	7V, 10V
Rds On (Max) @ Id, Vgs:	2.8mOhm @ 76A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	209 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	8250 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	3.8W (Ta), 230W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220AB
Package / Case:	TO-220-3

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